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Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Samsung M378A1G43DB0-CPB 8GB vs Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB 需要考虑的原因
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 36
    左右 -71% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.2 left arrow 10.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 21
  • 读取速度，GB/s
    15.0 left arrow 17.6
  • 写入速度，GB/s
    10.3 left arrow 12.2
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 3126

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965596-016.B01G 8GB
Kingston 9965596-016.B01G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CM4B16G4J2400A16K2-O 16GB
Corsair CM4B16G4J2400A16K2-O 16GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5273CH0-CK0 4GB
Samsung M471B5273CH0-CK0 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT25664BA1339.D8FE 2GB
Crucial Technology CT25664BA1339.D8FE 2GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KF2666C13D4/8GX 8GB
Kingston KF2666C13D4/8GX 8GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Samsung M471A1K1KBB1-CRC 8GB
Samsung M471A1K1KBB1-CRC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMR16GX4M2C3200C16 8GB
Corsair CMR16GX4M2C3200C16 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
G Skill Intl F4-3600C16-8GTRG 8GB
G Skill Intl F4-3600C16-8GTRG 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
Crucial Technology BL32G32C16S4B.M16FB1 32GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C14-8GTZSK 8GB
G Skill Intl F4-3200C14-8GTZSK 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4133C19-8GTZA 8GB
G Skill Intl F4-4133C19-8GTZA 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
内存RAM