RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M378A1K43EB2-CWE 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Compare
Samsung M378A1K43EB2-CWE 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Overall score
Samsung M378A1K43EB2-CWE 8GB
Overall score
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378A1K43EB2-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
33
Around -18% lower latency
Faster reading speed, GB/s
18.1
17.6
Average value in the tests
Faster write speed, GB/s
14.8
12.0
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378A1K43EB2-CWE 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
28
Read speed, GB/s
17.6
18.1
Write speed, GB/s
12.0
14.8
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2910
3564
Samsung M378A1K43EB2-CWE 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1K43EB2-CWE 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
Mushkin 991586 2GB
Transcend Information JM2666HLE-16G 16GB
AMD R538G1601U2S 8GB
Kingston HP32D4U2S8MR-8 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-2400C16-4GFX 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Kingston 9965669-031.A00G 16GB
Kingston HP698651-154-MCN 8GB
SK Hynix HMA41GR7AFR4N-TF 8GB
Samsung M378B5273DH0-CH9 4GB
Kingston 99U5474-037.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 3000 8GB
Kingston 9965433-034.A00LF 4GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston KHX3333C16D4/16GX 16GB
Samsung M378B5273DH0-CH9 4GB
Essencore Limited IM48GU88N24-FFFHA0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C15-8GTZSK 8GB
Samsung M393B1K70QB0-CK0 8GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Kingston 9965525-155.A00LF 8GB
Samsung M378A1K43CB2-CTD 8GB
Report a bug
×
Bug description
Source link