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Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Compare
Samsung M378B5173BH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Overall score
Samsung M378B5173BH0-CH9 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173BH0-CH9 4GB
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Below the latency in the PassMark tests, ns
23
24
Around 4% lower latency
Faster reading speed, GB/s
13.4
12.7
Average value in the tests
Faster write speed, GB/s
8.0
6.3
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Report a bug
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5173BH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
23
24
Read speed, GB/s
13.4
12.7
Write speed, GB/s
8.0
6.3
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2269
2256
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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