Samsung M378B5673EH1-CH9 2GB
Kingston HX316C10F/8 8GB

Samsung M378B5673EH1-CH9 2GB vs Kingston HX316C10F/8 8GB

Overall score
star star star star star
Samsung M378B5673EH1-CH9 2GB

Samsung M378B5673EH1-CH9 2GB

Overall score
star star star star star
Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Differences

  • Below the latency in the PassMark tests, ns
    36 left arrow 38
    Around -6% lower latency
  • Faster reading speed, GB/s
    14.7 left arrow 13.7
    Average value in the tests
  • Faster write speed, GB/s
    9.2 left arrow 8.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5673EH1-CH9 2GB
Kingston HX316C10F/8 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    38 left arrow 36
  • Read speed, GB/s
    13.7 left arrow 14.7
  • Write speed, GB/s
    8.5 left arrow 9.2
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1865 left arrow 2585
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

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