RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
11.3
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
104
Around -225% lower latency
Faster write speed, GB/s
7.6
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
32
Read speed, GB/s
3,192.0
11.3
Write speed, GB/s
2,404.5
7.6
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
2292
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB RAM comparisons
Crucial Technology CT51264BD160B.C16F 4GB
Kingston ACR16D3LS1NGG/2G 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston HX318C10FK/4 4GB
V-GEN D4H8GS24A8 8GB
Mushkin 996902 2GB
Kingston 9965639-002.A01G 8GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-4000C16-8GTZRA 8GB
Mushkin 991679ES 996679ES 2GB
Patriot Memory (PDP Systems) PSD44G240081S 4GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology CT8G4DFD8213.16FA11 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston KHX3333C16D4/8GX 8GB
Kingston 9905471-076.A00LF 8GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFD8213.M16FB 16GB
SK Hynix HMT151R7TFR4C-H9 4GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMW16GX4M1Z3600C18 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D240FSA.8FBD 4GB
Kingston 9905403-011.A03LF 2GB
Samsung M378A2K43EB1-CWE 16GB
Report a bug
×
Bug description
Source link