RAM comparison Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Overall score

Samsung M395T2863QZ4-CF76 1GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M395T2863QZ4-CF76 1GB

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Below the latency in the PassMark tests, ns

30 104

Around -247% lower latency
Faster write speed, GB/s

8.5 2,404.5

Average value in the tests
Higher memory bandwidth, mbps

17000 6400

Around 2.66 higher bandwidth

Complete list of technical specifications

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Main characteristics

Other

Description

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)

786 2234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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