RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Compare
Samsung M395T2863QZ4-CF76 1GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Overall score
Samsung M395T2863QZ4-CF76 1GB
Overall score
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M395T2863QZ4-CF76 1GB
Report a bug
Faster reading speed, GB/s
3
15.3
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Report a bug
Below the latency in the PassMark tests, ns
72
104
Around -44% lower latency
Faster write speed, GB/s
8.0
2,404.5
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M395T2863QZ4-CF76 1GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
104
72
Read speed, GB/s
3,192.0
15.3
Write speed, GB/s
2,404.5
8.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
786
1593
Samsung M395T2863QZ4-CF76 1GB RAM comparisons
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Corsair CML16GX3M2A1600C10 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Swissbit SLN04G64E1BQ2SA-DC 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-16GTZSW 16GB
SK Hynix HMT125S6TFR8C-G7 2GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Samsung M393B5170FH0-CK0 4GB
Samsung M471A2G43AB2-CWE 16GB
Crucial Technology CT16G4DFD832A.M16FJ 16GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-3000C16-16GVRB 16GB
Crucial Technology CT25664BA1339.M8FK 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Kingston 9965516-112.A00LF 16GB
Corsair CMW64GX4M4E3200C16 16GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Apacer Technology 78.C1GMM.AUC0B 8GB
Samsung M471B5273EB0-CK0 4GB
Corsair CM4B8G1J3000K16W4 8GB
Report a bug
×
Bug description
Source link