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Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB

Samsung M4 70T5663QZ3-CE6 2GB vs Micron Technology 8ATF2G64AZ-3G2B1 16GB

Overall score
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Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Overall score
star star star star star
Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Differences Specifications Comments

Differences

Samsung M4 70T5663QZ3-CE6 2GB Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 19.5
    Average value in the tests
Micron Technology 8ATF2G64AZ-3G2B1 16GB Reasons to consider
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 68
    Around -84% lower latency
  • Faster write speed, GB/s
    12.4 left arrow 1,702.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 5300
    Around 4.83 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M4 70T5663QZ3-CE6 2GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    68 left arrow 37
  • Read speed, GB/s
    3,886.6 left arrow 19.5
  • Write speed, GB/s
    1,702.6 left arrow 12.4
  • Memory bandwidth, mbps
    5300 left arrow 25600
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    654 left arrow 3355

Samsung M4 70T5663QZ3-CE6 2GB RAM comparisons

SK Hynix HYMP125U64CP8-S6 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB RAM comparisons

Kingston 9905471-002.A00LF 2GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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