RAM comparison Samsung M471A5244CB0-CWE 4GB vs PNY Electronics 4GBH2X02E99927-16- 4GB

Samsung M471A5244CB0-CWE 4GB vs PNY Electronics 4GBH2X02E99927-16- 4GB

Overall score

Samsung M471A5244CB0-CWE 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M471A5244CB0-CWE 4GB

Faster reading speed, GB/s

15.5 14

Average value in the tests
Faster write speed, GB/s

12.0 8.7

Average value in the tests
Higher memory bandwidth, mbps

25600 10600

Around 2.42% higher bandwidth

Reasons to consider
PNY Electronics 4GBH2X02E99927-16- 4GB

Complete list of technical specifications

Samsung M471A5244CB0-CWE 4GB

PNY Electronics 4GBH2X02E99927-16- 4GB

Main characteristics

Other

Description

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)

2283 2373

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns