takeMS International AG TMS2GB264D083805EV 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

takeMS International AG TMS2GB264D083805EV 2GB vs Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Overall score
star star star star star
takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Overall score
star star star star star
Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Differences

  • Faster reading speed, GB/s
    3 left arrow 19.7
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    20 left arrow 50
    Around -150% lower latency
  • Faster write speed, GB/s
    15.2 left arrow 1,457.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 6400
    Around 2.66 higher bandwidth

Specifications

Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    50 left arrow 20
  • Read speed, GB/s
    3,757.3 left arrow 19.7
  • Write speed, GB/s
    1,457.4 left arrow 15.2
  • Memory bandwidth, mbps
    6400 left arrow 17000
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    557 left arrow 3473
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons