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takeMS International AG TMS2GB264D083805EV 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Compare
takeMS International AG TMS2GB264D083805EV 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Overall score
takeMS International AG TMS2GB264D083805EV 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
takeMS International AG TMS2GB264D083805EV 2GB
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Faster reading speed, GB/s
3
16.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Report a bug
Below the latency in the PassMark tests, ns
26
50
Around -92% lower latency
Faster write speed, GB/s
12.6
1,457.4
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
takeMS International AG TMS2GB264D083805EV 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
50
26
Read speed, GB/s
3,757.3
16.2
Write speed, GB/s
1,457.4
12.6
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
557
2955
takeMS International AG TMS2GB264D083805EV 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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