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Unifosa Corporation GU512303EP0202 2GB
Samsung M378B5673EH1-CH9 2GB
Compare
Unifosa Corporation GU512303EP0202 2GB vs Samsung M378B5673EH1-CH9 2GB
Overall score
Unifosa Corporation GU512303EP0202 2GB
Overall score
Samsung M378B5673EH1-CH9 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU512303EP0202 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
38
Around 29% lower latency
Reasons to consider
Samsung M378B5673EH1-CH9 2GB
Report a bug
Faster reading speed, GB/s
13.7
12.9
Average value in the tests
Faster write speed, GB/s
8.5
7.7
Average value in the tests
Specifications
Complete list of technical specifications
Unifosa Corporation GU512303EP0202 2GB
Samsung M378B5673EH1-CH9 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
27
38
Read speed, GB/s
12.9
13.7
Write speed, GB/s
7.7
8.5
Memory bandwidth, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
Timings / Clock speed
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1930
1865
Unifosa Corporation GU512303EP0202 2GB RAM comparisons
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Samsung M378B5673EH1-CH9 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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