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Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB

Diferencias Especificaciones Comentarios

Diferencias

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB Razones a tener en cuenta
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Informar de un error
  • Mayor velocidad de lectura, GB/s
    11.3 left arrow 11.2
    Valor medio en las pruebas
  • Mayor velocidad de escritura, GB/s
    8.0 left arrow 7.6
    Valor medio en las pruebas
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB Razones a tener en cuenta
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
Informar de un error

Especificaciones

Lista completa de especificaciones técnicas
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB
Principales características
  • Tipo de memoria
    DDR3 left arrow DDR3
  • Latencia en PassMark, ns
    31 left arrow 31
  • Velocidad de lectura, GB/s
    11.3 left arrow 11.2
  • Velocidad de escritura, GB/s
    8.0 left arrow 7.6
  • Ancho de banda de la memoria, mbps
    12800 left arrow 12800
Other
  • Descripción
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Tiempos / Velocidad del reloj
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Clasificación PassMark (Cuanto más, mejor)
    2066 left arrow 2026

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6BFR8A-PB 8GB Comparaciones de la memoria RAM

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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