Samsung M3 78T3354BZ0-CCC 256MB vs Samsung M471A1K43EB1-CWE 8GB

Note globale

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Note globale

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

Différences Spécifications Commentaires

Différences

Samsung M3 78T3354BZ0-CCC 256MB

Raisons de considérer
Samsung M3 78T3354BZ0-CCC 256MB

Signaler un bogue

Vitesse de lecture plus rapide, GB/s

2 16

Valeur moyenne dans les tests

Samsung M471A1K43EB1-CWE 8GB

Raisons de considérer
Samsung M471A1K43EB1-CWE 8GB

Signaler un bogue

Vitesse d'écriture plus rapide, GB/s

12.4 1,519.2

Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps

25600 3200

Autour de 8 bande passante supérieure

Spécifications

Liste complète des spécifications techniques

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M471A1K43EB1-CWE 8GB

Principales caractéristiques

Type de mémoire

DDR2 DDR4
Latence dans PassMark, ns

46 46
Vitesse de lecture, GB/s

2,909.8 16.0
Vitesse d'écriture, GB/s

1,519.2 12.4
Largeur de bande de la mémoire, mbps

3200 25600

Other

Description

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Vitesse d'horloge

3-3-3-12 / 400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Classement PassMark (Plus il y en a, mieux c'est)

241 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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