Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
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Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB

Review RAM Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB, specifications, benchmarks

Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB memory module review. Main technical characteristics and benchmark performance evaluation from PassMark. We suggest studying all the data and comparing it with the competitive model.

Specifications

Complete list of technical specifications
Features
  • Type
    DDR2
  • Name
    Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G
  • Characteristics
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Memory bandwidth
    6400 mbps
  • Timings / Clock speed

    * check the manufacturer's website

    5-5-5-15 / 800 MHz
Performance by PassMark
  • Latency
    72 ns
  • Read speed
    2,733.6 GB/s
  • Write speed
    703.4 GB/s
# 333 400 533 667 800 933 1067 MT/s
4 12.00 10.00 7.50 6.00 5.00 4.29 3.75
5 15.00 12.50 9.38 7.50 6.25 5.36 4.69
6 18.00 15.00 11.25 9.00 7.50 6.43 5.62
7 21.00 17.50 13.13 10.50 8.75 7.50 6.56
8 24.00 20.00 15.00 12.00 10.00 8.57 7.50
9 27.00 22.50 16.88 13.50 11.25 9.64 8.44
10 30.00 25.00 18.75 15.00 12.50 10.71 9.37
11 33.00 27.50 20.63 16.50 13.75 11.79 10.31
12 36.00 30.00 22.50 18.00 15.00 12.86 11.25
CL

CAS latency measures the number of clock cycles that pass from when a request to read data is made to when such information is available

Performance tests

Real tests Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB
Read Uncached Transfer Speed
Average memory read time without caching
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Hynix Semiconductor (Hyundai Electronics) DDR2 800 2G 2GB