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Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB

Micron Technology 8JTF51264AZ-1G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB

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Micron Technology 8JTF51264AZ-1G6E1 4GB

Micron Technology 8JTF51264AZ-1G6E1 4GB

Punteggio complessivo
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Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 8JTF51264AZ-1G6E1 4GB Motivi da considerare
Micron Technology 8JTF51264AZ-1G6E1 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.7 left arrow 12.7
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    8.1 left arrow 7.3
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    28 left arrow 42
    Intorno -50% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    42 left arrow 28
  • Velocità di lettura, GB/s
    13.7 left arrow 12.7
  • Velocità di scrittura, GB/s
    8.1 left arrow 7.3
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    2173 left arrow 2022

Micron Technology 8JTF51264AZ-1G6E1 4GB Confronto tra le RAM

Samsung M378B5173CB0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB Confronto tra le RAM

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Ultimi confronti

Micron Technology 8JTF51264AZ-1G6E1 4GB
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Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A
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