Micron Technology 8JTF51264AZ-1G6E1 4GB vs Samsung M378B5173CB0-CK0 4GB

Punteggio complessivo

Micron Technology 8JTF51264AZ-1G6E1 4GB

Micron Technology 8JTF51264AZ-1G6E1 4GB

Punteggio complessivo

Samsung M378B5173CB0-CK0 4GB

Samsung M378B5173CB0-CK0 4GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 8JTF51264AZ-1G6E1 4GB

Motivi da considerare
Micron Technology 8JTF51264AZ-1G6E1 4GB

Velocità di lettura più elevata, GB/s

13.7 13.6

Valore medio nei test

Samsung M378B5173CB0-CK0 4GB

Motivi da considerare
Samsung M378B5173CB0-CK0 4GB

Al di sotto della latenza nei test PassMark, ns

41 42

Intorno -2% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Micron Technology 8JTF51264AZ-1G6E1 4GB

Samsung M378B5173CB0-CK0 4GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

42 41
Velocità di lettura, GB/s

13.7 13.6
Velocità di scrittura, GB/s

8.1 8.1
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

2173 2229

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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