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SK Hynix GKE800SO102408-2400 8GB
Samsung M323R2GA3BB0-CQKOD 16GB

SK Hynix GKE800SO102408-2400 8GB vs Samsung M323R2GA3BB0-CQKOD 16GB

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SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

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Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix GKE800SO102408-2400 8GB Motivi da considerare
SK Hynix GKE800SO102408-2400 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    14 left arrow 13.4
    Valore medio nei test
Samsung M323R2GA3BB0-CQKOD 16GB Motivi da considerare
Samsung M323R2GA3BB0-CQKOD 16GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    25 left arrow 37
    Intorno -48% latenza inferiore
  • Velocità di scrittura più elevata, GB/s
    12.1 left arrow 9.3
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix GKE800SO102408-2400 8GB
Samsung M323R2GA3BB0-CQKOD 16GB
Caratteristiche principali
  • Tipo di memoria
    DDR4 left arrow DDR5
  • Latenza in PassMark, ns
    37 left arrow 25
  • Velocità di lettura, GB/s
    14.0 left arrow 13.4
  • Velocità di scrittura, GB/s
    9.3 left arrow 12.1
  • Larghezza di banda della memoria, mbps
    19200 left arrow 19200
Other
  • Descrizione
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • Temporizzazioni / Velocità di clock
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow no data / 2400 MHz
  • Classifica PassMark (più sono, meglio è)
    2327 left arrow 3419

SK Hynix GKE800SO102408-2400 8GB Confronto tra le RAM

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M323R2GA3BB0-CQKOD 16GB Confronto tra le RAM

Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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