SK Hynix GKE800SO102408-2400 8GB vs Samsung M323R2GA3BB0-CQKOD 16GB

Punteggio complessivo

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Punteggio complessivo

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix GKE800SO102408-2400 8GB

Motivi da considerare
SK Hynix GKE800SO102408-2400 8GB

Velocità di lettura più elevata, GB/s

14 13.4

Valore medio nei test

Samsung M323R2GA3BB0-CQKOD 16GB

Motivi da considerare
Samsung M323R2GA3BB0-CQKOD 16GB

Al di sotto della latenza nei test PassMark, ns

25 37

Intorno -48% latenza inferiore
Velocità di scrittura più elevata, GB/s

12.1 9.3

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

SK Hynix GKE800SO102408-2400 8GB

Samsung M323R2GA3BB0-CQKOD 16GB

Caratteristiche principali

Tipo di memoria

DDR4 DDR5
Latenza in PassMark, ns

37 25
Velocità di lettura, GB/s

14.0 13.4
Velocità di scrittura, GB/s

9.3 12.1
Larghezza di banda della memoria, mbps

19200 19200

Other

Descrizione

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
Temporizzazioni / Velocità di clock

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz no data / 2400 MHz
Classifica PassMark (più sono, meglio è)

2327 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

Ultimi confronti

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 99U5713-001.A00G 4GB

Kingston 99U5713-001.A00G 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

Crucial Technology CT8G4DFRA32A.C8FP 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Patriot Memory (PDP Systems) PSD48G240082 8GB

Patriot Memory (PDP Systems) PSD48G240082 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

SK Hynix HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1