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SK Hynix HYMP112U64CP8-S6 1GB
Samsung M3 78T2863EHS-CF7 1GB

SK Hynix HYMP112U64CP8-S6 1GB vs Samsung M3 78T2863EHS-CF7 1GB

Punteggio complessivo
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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Punteggio complessivo
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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HYMP112U64CP8-S6 1GB Motivi da considerare
SK Hynix HYMP112U64CP8-S6 1GB
Segnala un bug
Samsung M3 78T2863EHS-CF7 1GB Motivi da considerare
Samsung M3 78T2863EHS-CF7 1GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    4 left arrow 4
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    2,123.3 left arrow 2,076.1
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M3 78T2863EHS-CF7 1GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR2
  • Latenza in PassMark, ns
    59 left arrow 59
  • Velocità di lettura, GB/s
    4,723.5 left arrow 4,833.8
  • Velocità di scrittura, GB/s
    2,076.1 left arrow 2,123.3
  • Larghezza di banda della memoria, mbps
    6400 left arrow 6400
Other
  • Descrizione
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Classifica PassMark (più sono, meglio è)
    741 left arrow 731

SK Hynix HYMP112U64CP8-S6 1GB Confronto tra le RAM

SK Hynix HYMP112U64CP8-Y5 1GB
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Samsung M3 78T2863EHS-CF7 1GB Confronto tra le RAM

Samsung M3 78T2863QZS-CE6 1GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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