SK Hynix HYMP112U64CP8-S6 1GB vs Samsung M3 78T2863EHS-CF7 1GB

Punteggio complessivo

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

Punteggio complessivo

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HYMP112U64CP8-S6 1GB

Motivi da considerare
SK Hynix HYMP112U64CP8-S6 1GB

Samsung M3 78T2863EHS-CF7 1GB

Motivi da considerare
Samsung M3 78T2863EHS-CF7 1GB

Velocità di lettura più elevata, GB/s

4 4

Valore medio nei test
Velocità di scrittura più elevata, GB/s

2,123.3 2,076.1

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

SK Hynix HYMP112U64CP8-S6 1GB

Samsung M3 78T2863EHS-CF7 1GB

Caratteristiche principali

Tipo di memoria

DDR2 DDR2
Latenza in PassMark, ns

59 59
Velocità di lettura, GB/s

4,723.5 4,833.8
Velocità di scrittura, GB/s

2,076.1 2,123.3
Larghezza di banda della memoria, mbps

6400 6400

Other

Descrizione

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
Temporizzazioni / Velocità di clock

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
Classifica PassMark (più sono, meglio è)

741 731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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