Patriot Memory (PDP Systems) PSD34G133381 4GB vs Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

総合得点

Patriot Memory (PDP Systems) PSD34G133381 4GB

Patriot Memory (PDP Systems) PSD34G133381 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

相違点仕様コメント

相違点

Patriot Memory (PDP Systems) PSD34G133381 4GB

考慮すべき理由
Patriot Memory (PDP Systems) PSD34G133381 4GB

バグを報告する

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

24 27

周辺 -13% 低遅延
読み出し速度の高速化、GB/s

15.5 12.7

テスト平均値
書き込み速度の高速化、GB/s

8.8 7.3

テスト平均値

仕様

技術仕様の完全リスト

Patriot Memory (PDP Systems) PSD34G133381 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

27 24
読み出し速度、GB/s

12.7 15.5
書き込み速度、GB/秒

7.3 8.8
メモリ帯域幅、mbps

10600 10600

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
タイミング / クロック速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

2121 2444

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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