Samsung M393B5270CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

総合得点

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

相違点仕様コメント

相違点

Samsung M393B5270CH0-CH9 4GB

考慮すべき理由
Samsung M393B5270CH0-CH9 4GB

バグを報告する

読み出し速度の高速化、GB/s

10.6 6.4

テスト平均値

Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

バグを報告する

PassMarkテストでのレイテンシー以下、ns

31 42

周辺 -35% 低遅延
書き込み速度の高速化、GB/s

9.4 9.0

テスト平均値

仕様

技術仕様の完全リスト

Samsung M393B5270CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

主な特徴

メモリータイプ

DDR3 DDR3
PassMarkにおけるレイテンシー、ns

42 31
読み出し速度、GB/s

10.6 6.4
書き込み速度、GB/秒

9.0 9.4
メモリ帯域幅、mbps

10600 10600

Other

商品説明

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
タイミング / クロック速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
ランキングPassMark（多ければ多いほど良い）

2423 1958

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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