Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

Samsung M393B5270CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB

差异

  • 更快的读取速度,GB/s
    10.6 left arrow 6.4
    测试中的平均数值
  • 低于PassMark测试中的延时,ns
    31 left arrow 42
    左右 -35% 更低的延时
  • 更快的写入速度,GB/s
    9.4 left arrow 9.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT151R7TFR4C-H9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    42 left arrow 31
  • 读取速度,GB/s
    10.6 left arrow 6.4
  • 写入速度,GB/s
    9.0 left arrow 9.4
  • 内存带宽,mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 1958
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较