A-DATA Technology DQKD1A08 1GB vs G Skill Intl F4-2800C16-8GRK 8GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

G Skill Intl F4-2800C16-8GRK 8GB

G Skill Intl F4-2800C16-8GRK 8GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 14

测试中的平均数值

G Skill Intl F4-2800C16-8GRK 8GB

需要考虑的原因
G Skill Intl F4-2800C16-8GRK 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 52

左右 -33% 更低的延时
更快的写入速度，GB/s

10.5 1,145.9

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-2800C16-8GRK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 39
读取速度，GB/s

2,614.5 14.0
写入速度，GB/s

1,145.9 10.5
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

409 2834

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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SK Hynix HMT451S6BFR8A-PB 4GB

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Samsung M471A5244CB0-CWE 4GB

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Kingston 99U5704-001.A00G 4GB

Kingston 99U5704-001.A00G 4GB