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ASint Technology SSA302G08-EGN1C 4GB
Samsung M386A8K40BM1-CRC 64GB

ASint Technology SSA302G08-EGN1C 4GB vs Samsung M386A8K40BM1-CRC 64GB

总分
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

总分
star star star star star
Samsung M386A8K40BM1-CRC 64GB

Samsung M386A8K40BM1-CRC 64GB

差异 规格 评论

差异

ASint Technology SSA302G08-EGN1C 4GB 需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 34
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    12.6 left arrow 10.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 7.5
    测试中的平均数值
Samsung M386A8K40BM1-CRC 64GB 需要考虑的原因
Samsung M386A8K40BM1-CRC 64GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Samsung M386A8K40BM1-CRC 64GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 34
  • 读取速度，GB/s
    12.6 left arrow 10.4
  • 写入速度，GB/s
    9.5 left arrow 7.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2174 left arrow 2297

ASint Technology SSA302G08-EGN1C 4GB RAM的比较

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

Samsung M386A8K40BM1-CRC 64GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Samsung M386A8K40BM1-CRC 64GB
Samsung M386A8K40BM1-CRC 64GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Transcend Information AQD-SD4U16GN21-SE 16GB
Transcend Information AQD-SD4U16GN21-SE 16GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Corsair CMSX32GX4M2A3000C16 16GB
Corsair CMSX32GX4M2A3000C16 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
内存RAM
Kingston KHX16 4GB
Kingston KHX16 4GB
Kingston XW21KG-MIE-NX 8GB
Kingston XW21KG-MIE-NX 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
内存RAM
Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
Kingston XRGM6C-MIB 16GB
Kingston XRGM6C-MIB 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
AMD R744G2400U1S 4GB
AMD R744G2400U1S 4GB
内存RAM
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Samsung M471A2K43BB1-CTD 16GB
Samsung M471A2K43BB1-CTD 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMWS8GL3200K16W4E 8GB
Corsair CMWS8GL3200K16W4E 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Micron Technology CT8G4DFD8213.16FA2 8GB
Micron Technology CT8G4DFD8213.16FA2 8GB
内存RAM