Corsair CMX4GX3M1A1333C9 4GB vs A-DATA Technology AO1P24HC4R1-BSIS 4GB

总分

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

总分

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

差异规格评论

差异

Corsair CMX4GX3M1A1333C9 4GB

需要考虑的原因
Corsair CMX4GX3M1A1333C9 4GB

报告一个错误

A-DATA Technology AO1P24HC4R1-BSIS 4GB

需要考虑的原因
A-DATA Technology AO1P24HC4R1-BSIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 40

左右 -11% 更低的延时
更快的读取速度，GB/s

14.9 12.8

测试中的平均数值
更快的写入速度，GB/s

8.2 7.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CMX4GX3M1A1333C9 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 36
读取速度，GB/s

12.8 14.9
写入速度，GB/s

7.0 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2021 2281

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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A-DATA Technology DQVE1908 512MB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMW64GX4M2E3200C16 32GB

Corsair CMW64GX4M2E3200C16 32GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Essencore Limited IM48GU48N28-GGGHM 8GB

Essencore Limited IM48GU48N28-GGGHM 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB