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Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Corsair CMZ16GX3M2A2400C10 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

总分
star star star star star
Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

差异 规格 评论

差异

Corsair CMZ16GX3M2A2400C10 8GB 需要考虑的原因
Corsair CMZ16GX3M2A2400C10 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 37
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 11.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Corsair CMZ16GX3M2A2400C10 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 26
  • 读取速度，GB/s
    11.4 left arrow 15.6
  • 写入速度，GB/s
    7.4 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1683 left arrow 2382

Corsair CMZ16GX3M2A2400C10 8GB RAM的比较

G Skill Intl F3-2400C11-8-SR 8GB
Corsair CMY16GX3M2A2400C11 8GB

Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB RAM的比较

Samsung M393B2G70BH0-CH9 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
内存RAM
Kingston 99U5458-002.A00LF 2GB
Kingston 99U5458-002.A00LF 2GB
Samsung M393A2K40BB1-CRC 16GB
Samsung M393A2K40BB1-CRC 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMR16GX4M2Z2933C16 8GB
Corsair CMR16GX4M2Z2933C16 8GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Team Group Inc. DDR4 3000 4GB
Team Group Inc. DDR4 3000 4GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston HX424C15PB/4 4GB
Kingston HX424C15PB/4 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2400C17-8GFT 8GB
G Skill Intl F4-2400C17-8GFT 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix HMA82GS6AFRFR-UH 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
内存RAM
SK Hynix HMT325U6BFR8C-H9 2GB
SK Hynix HMT325U6BFR8C-H9 2GB
Apacer Technology 78.D1GS7.B7B0B 16GB
Apacer Technology 78.D1GS7.B7B0B 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston 9905678-005.A00G 8GB
Kingston 9905678-005.A00G 8GB
内存RAM