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Crucial Technology BLS8G3N18AES4.16FE 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
比较
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
总分
Crucial Technology BLS8G3N18AES4.16FE 8GB
总分
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB
报告一个错误
需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
报告一个错误
低于PassMark测试中的延时,ns
37
42
左右 -14% 更低的延时
更快的读取速度,GB/s
16
13.2
测试中的平均数值
更快的写入速度,GB/s
12.6
9.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
37
读取速度,GB/s
13.2
16.0
写入速度,GB/s
9.4
12.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2326
2808
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM的比较
Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
G Skill Intl F3-2400C11-8GSR 8GB
V-GEN D4H4GL26A8TS5 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Samsung M471B5173DB0-YK0 4GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Kingston 99U5584-004.A00LF 4GB
Essencore Limited IM48GU48A30-GIIHM 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston HP32D4U8S8HD-8X 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-3000C16-8GTZN 8GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3200C16-8GSXFB 8GB
TwinMOS 8DPT5MK8-TATP 2GB
SK Hynix GKE160UD102408-2400 16GB
Kingston ACR256X64D3S1333C9 2GB
Dust Leopard DDR4-2400 C17 8GB 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Roa Logic BV iGame DDR4 8G 3000 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-4GVK 4GB
报告一个错误
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Bug description
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