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Crucial Technology BLS8G3N18AES4.16FE 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Overall score
star star star star star
Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Overall score
star star star star star
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Differences Specifications Comments

Differences

Crucial Technology BLS8G3N18AES4.16FE 8GB Reasons to consider
Crucial Technology BLS8G3N18AES4.16FE 8GB
Report a bug
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 42
    Around -14% lower latency
  • Faster reading speed, GB/s
    16 left arrow 13.2
    Average value in the tests
  • Faster write speed, GB/s
    12.6 left arrow 9.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    42 left arrow 37
  • Read speed, GB/s
    13.2 left arrow 16.0
  • Write speed, GB/s
    9.4 left arrow 12.6
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2326 left arrow 2808

Crucial Technology BLS8G3N18AES4.16FE 8GB RAM comparisons

Samsung M471B1G73DB0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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