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Crucial Technology BLS8G3N18AES4.16FE 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
Crucial Technology BLS8G3N18AES4.16FE 8GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
Crucial Technology BLS8G3N18AES4.16FE 8GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLS8G3N18AES4.16FE 8GB
Report a bug
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
42
Around -14% lower latency
Faster reading speed, GB/s
16
13.2
Average value in the tests
Faster write speed, GB/s
12.6
9.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLS8G3N18AES4.16FE 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
37
Read speed, GB/s
13.2
16.0
Write speed, GB/s
9.4
12.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2326
2808
Crucial Technology BLS8G3N18AES4.16FE 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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