Crucial Technology CT25664BA160B.C16F 2GB vs Micron Technology 16ATF2G64AZ-2G6J1 16GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

Micron Technology 16ATF2G64AZ-2G6J1 16GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 33

左右 12% 更低的延时

Micron Technology 16ATF2G64AZ-2G6J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6J1 16GB

报告一个错误

更快的读取速度，GB/s

16.1 14.3

测试中的平均数值
更快的写入速度，GB/s

12.7 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

Micron Technology 16ATF2G64AZ-2G6J1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 33
读取速度，GB/s

14.3 16.1
写入速度，GB/s

10.1 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2227 3181

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CM4X16GE2133C15S2 16GB

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Samsung M471B5173QH0-YK0 4GB

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Kingston 9905702-184.A00G 8GB

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB

Micron Technology 18ASF2G72AZ-2G1B1 16GB