Crucial Technology CT51264BA1339.C16F 4GB vs SK Hynix HMA81GU6CJR8N-XN 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

SK Hynix HMA81GU6CJR8N-XN 8GB

SK Hynix HMA81GU6CJR8N-XN 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

SK Hynix HMA81GU6CJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GU6CJR8N-XN 8GB

报告一个错误

更快的读取速度，GB/s

16.4 13.9

测试中的平均数值
更快的写入速度，GB/s

12.6 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

SK Hynix HMA81GU6CJR8N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.9 16.4
写入速度，GB/s

8.4 12.6
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2251 3046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2400C14-16GVK 16GB

G Skill Intl F4-2400C14-16GVK 16GB

Kingston 99U5474-028.A00LF 4GB

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Team Group Inc. TEAMGROUP-SD4-3200 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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SK Hynix HMA41GR7AFR8N-UH 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB