Crucial Technology CT51264BD160B.C16F 4GB vs G Skill Intl F4-2133C15-4GRB 4GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

G Skill Intl F4-2133C15-4GRB 4GB

G Skill Intl F4-2133C15-4GRB 4GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

更快的读取速度，GB/s

13.9 13.1

测试中的平均数值

G Skill Intl F4-2133C15-4GRB 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRB 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 41

左右 -5% 更低的延时
更快的写入速度，GB/s

10.3 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-2133C15-4GRB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 39
读取速度，GB/s

13.9 13.1
写入速度，GB/s

9.7 10.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 2574

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Micron Technology 8ATF1G64HZ-2G6J1 8GB

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SK Hynix HMA41GR7BJR4N-UH 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston XW21KG-MIE2 8GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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Kingston HP32D4U2S8MR-8 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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G Skill Intl F4-2400C15Z8GNT 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB