Crucial Technology CT51264BD160B.C16F 4GB vs Samsung M378A1K43CB2-CTD 8GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Samsung M378A1K43CB2-CTD 8GB

Samsung M378A1K43CB2-CTD 8GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Samsung M378A1K43CB2-CTD 8GB

需要考虑的原因
Samsung M378A1K43CB2-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的读取速度，GB/s

15.9 13.9

测试中的平均数值
更快的写入速度，GB/s

12.0 9.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Samsung M378A1K43CB2-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

13.9 15.9
写入速度，GB/s

9.7 12.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2366 2952

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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