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Crucial Technology ST51264BA1339.16FK 4GB
Samsung M378B5273DH0-CH9 4GB

Crucial Technology ST51264BA1339.16FK 4GB vs Samsung M378B5273DH0-CH9 4GB

总分
star star star star star
Crucial Technology ST51264BA1339.16FK 4GB

Crucial Technology ST51264BA1339.16FK 4GB

总分
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

差异 规格 评论

差异

Crucial Technology ST51264BA1339.16FK 4GB 需要考虑的原因
Crucial Technology ST51264BA1339.16FK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 41
    左右 34% 更低的延时
  • 更快的读取速度，GB/s
    13.6 left arrow 13.3
    测试中的平均数值
Samsung M378B5273DH0-CH9 4GB 需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology ST51264BA1339.16FK 4GB
Samsung M378B5273DH0-CH9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 41
  • 读取速度，GB/s
    13.6 left arrow 13.3
  • 写入速度，GB/s
    8.3 left arrow 8.3
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2237 left arrow 2176

Crucial Technology ST51264BA1339.16FK 4GB RAM的比较

SK Hynix HMT351U6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Samsung M378B5273DH0-CH9 4GB RAM的比较

G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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