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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingston 9905678-121.A00G 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs Kingston 9905678-121.A00G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
Kingston 9905678-121.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
需要考虑的原因
Kingston 9905678-121.A00G 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
28
左右 -22% 更低的延时
更快的读取速度,GB/s
16.6
12.4
测试中的平均数值
更快的写入速度,GB/s
10.5
9.6
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Kingston 9905678-121.A00G 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
23
读取速度,GB/s
12.4
16.6
写入速度,GB/s
9.6
10.5
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2329
2710
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
Kingston 9905678-121.A00G 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK128GX4M8X3800C19 16GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Samsung M378B5773DH0-CH9 2GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMV4GX4M1A2666C18 4GB
Crucial Technology CT102464BF160B-16F 8GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMA82GR7AFR4N-TF 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Corsair CMK32GX4M1A2400C16 32GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston SMD4-S8G48HJ-26V 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F4-2800C15-16GVR 16GB
Kingston 9905403-134.A00LF 2GB
Samsung M393A1G43EB1-CRC 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology CT8G4DFRA266.C8FJ 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS4G4D26BFSE.8FB 4GB
报告一个错误
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Bug description
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