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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT8G4DFS824A.M8FH 8GB

总分
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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT8G4DFS824A.M8FH 8GB

Crucial Technology CT8G4DFS824A.M8FH 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.4
    测试中的平均数值
Crucial Technology CT8G4DFS824A.M8FH 8GB 需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FH 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 77
    左右 -148% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 31
  • 读取速度，GB/s
    3,405.2 left arrow 15.4
  • 写入速度，GB/s
    2,622.0 left arrow 9.6
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2554

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT8G4DFS824A.M8FH 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
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内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA82GU6MFR8N-TF 16GB
SK Hynix HMA82GU6MFR8N-TF 16GB
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Crucial Technology BL8G36C16U4WL.M8FE1 8GB
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Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
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Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
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A-DATA Technology DDR4 3200 2OZ 4GB
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Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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G Skill Intl F4-4400C18-8GTRG 8GB
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Kingston 9905403-444.A00LF 4GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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A-DATA Technology AD73I1B1672EG 2GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM
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Samsung M471B5673FH0-CF8 2GB
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Kingston KF3000C16D4/32GX 32GB
内存RAM
Kingston KHX1866C9D3/8GX 8GB
Kingston KHX1866C9D3/8GX 8GB
Kingston KHYXPX-MID 8GB
Kingston KHYXPX-MID 8GB
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