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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
62
左右 -107% 更低的延时
更快的读取速度,GB/s
16.8
7.4
测试中的平均数值
更快的写入速度,GB/s
13.8
5.9
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
30
读取速度,GB/s
7.4
16.8
写入速度,GB/s
5.9
13.8
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1612
3258
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMT16GX4M2Z3200C16 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2133C15-4GVK 4GB
Samsung M378A5244CB0-CTD 4GB
Kingston 9905624-023.A00G 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
SK Hynix HMT451S6DFR8A-PB 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905713-017.A00G 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CM4X16GE2666C16K2 16GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C15-16GVR 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Corsair CMX8GX3M2A2000C9 4GB
Asgard VMA44UG-MEC1U2AW1 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BL32G32C16U4B.M16FB1 32GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
报告一个错误
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Bug description
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