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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Micron Technology 8ATF1G64HZ-2G3E1 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
Micron Technology 8ATF1G64HZ-2G3E1 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3E1 8GB
报告一个错误
低于PassMark测试中的延时,ns
40
62
左右 -55% 更低的延时
更快的读取速度,GB/s
13.1
7.4
测试中的平均数值
更快的写入速度,GB/s
9.7
5.9
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
40
读取速度,GB/s
7.4
13.1
写入速度,GB/s
5.9
9.7
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1612
2204
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Micron Technology 8ATF1G64HZ-2G3E1 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Smart Modular SF4641G8CK8IWGKSEG 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Kingston 9905469-143.A00LF 4GB
A-DATA Technology 11137401 8GB
Kingston 9905471-001.A01LF 2GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFS6266.M4FB 8GB
Kingston KVT8FP-HYC 4GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
Kingston 9965525-018.A00LF 4GB
Apacer Technology 78.B1GN3.4032B 4GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMW16GX4M2K4266C19 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
报告一个错误
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Bug description
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