Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M378A2K43BB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M378A2K43BB1-CRC 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

Samsung M378A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M378A2K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 62

左右 -100% 更低的延时
更快的读取速度，GB/s

16 7.4

测试中的平均数值
更快的写入速度，GB/s

10.8 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M378A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

62 31
读取速度，GB/s

7.4 16.0
写入速度，GB/s

5.9 10.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1612 2816

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMZ16GX3M2A2400C10 8GB

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Jinyu CL16-16-16 D4-2400 8GB

Jinyu CL16-16-16 D4-2400 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

V-GEN D4H8GS24A8 8GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

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Ramaxel Technology RMUA5090KE68H9F2133 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

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G Skill Intl F4-3200C14-8GTZKW 8GB

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