Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 53

左右 47% 更低的延时
更快的读取速度，GB/s

10.9 10.1

测试中的平均数值

Micron Technology 9ASF51272PZ-2G3B1 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB

报告一个错误

更快的写入速度，GB/s

8.0 7.1

测试中的平均数值
更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 53
读取速度，GB/s

10.9 10.1
写入速度，GB/s

7.1 8.0
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1668 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Kingston KHX1600C9D3/8GX 8GB

Kingston KHX1600C9D3/8GX 8GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Patriot Memory (PDP Systems) 2666 C15 Series 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Apacer Technology 78.CAGPN.AZ50C 8GB

Apacer Technology 78.CAGPN.AZ50C 8GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Micron Technology 16ATF4G64HZ-3G2B2 32GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Kingston 9905712-016.A00G 16GB

Kingston 9905712-016.A00G 16GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

G Skill Intl F4-3466C16-16GTZ 16GB

G Skill Intl F4-3466C16-16GTZ 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Kingmax Semiconductor GLLH22F-18KII5------ 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB

Crucial Technology CT4G4DFS8213.C8FAR11 4GB