Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9 4GB
Kingston KHX2133C11D3/4GX 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9 4GB vs Kingston KHX2133C11D3/4GX 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9 4GB

总分
star star star star star
Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

差异

  • 低于PassMark测试中的延时,ns
    27 left arrow 37
    左右 27% 更低的延时
  • 更快的读取速度,GB/s
    15.5 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度,GB/s
    10.1 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9 4GB
Kingston KHX2133C11D3/4GX 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    27 left arrow 37
  • 读取速度,GB/s
    12.4 left arrow 15.5
  • 写入速度,GB/s
    7.8 left arrow 10.1
  • 内存带宽,mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2084 left arrow 2595
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较