RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2133C15-4GNT 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2133C15-4GNT 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2133C15-4GNT 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
36
左右 33% 更低的延时
更快的读取速度,GB/s
16
13.3
测试中的平均数值
更快的写入速度,GB/s
12.5
9.8
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-2133C15-4GNT 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2133C15-4GNT 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
36
读取速度,GB/s
16.0
13.3
写入速度,GB/s
12.5
9.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2358
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2133C15-4GNT 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2133C15-4GNT 4GB
AMD R534G1601U1S-UO 4GB
Corsair CMD8GX4M2B3866C18 4GB
Kingston 9905469-143.A00LF 4GB
Kingston 9905678-028.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C15-4GRR 4GB
Samsung M471A5244CB0-CWE 4GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Kingston KVR800D2N6/2G 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905469-124.A00LF 4GB
Kingston 99U5700-014.A00G 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Corsair CMD64GX4M8A2666C15 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3600C16-8GTESC 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Panram International Corporation PUD42400C154G2NJK 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43CB2-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD32GX4M4C3466C16W 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965667-001.A00G 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905630-018.A00G 8GB
报告一个错误
×
Bug description
Source link