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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C19-8GVK 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2666C19-8GVK 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2666C19-8GVK 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
39
左右 38% 更低的延时
更快的读取速度,GB/s
16
15.3
测试中的平均数值
更快的写入速度,GB/s
12.5
12.1
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2666C19-8GVK 8GB
报告一个错误
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2666C19-8GVK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
39
读取速度,GB/s
16.0
15.3
写入速度,GB/s
12.5
12.1
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
2760
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2666C19-8GVK 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMV4GX3M1B1600C11 4GB
Kingston KGTWW1-MIE 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Avant Technology J642GU42J5213N2 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9965596-023.B01G 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology AX4S2800316G18-B 16GB
Avant Technology F641GU67F9333G 8GB
Kingston CBD26D4U9S8MH-8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2666C19-8GVK 8GB
Samsung M393B5270CH0-CH9 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
Kingston 9905471-001.A01LF 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston KF2666C16D4/16G 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Samsung M393A2K43BB1-CPB 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M378A1K43BB2-CTD 8GB
报告一个错误
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