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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2800C16-8GRK 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2800C16-8GRK 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2800C16-8GRK 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
39
左右 38% 更低的延时
更快的读取速度,GB/s
16
14
测试中的平均数值
更快的写入速度,GB/s
12.5
10.5
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-2800C16-8GRK 8GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2800C16-8GRK 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
39
读取速度,GB/s
16.0
14.0
写入速度,GB/s
12.5
10.5
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2834
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2800C16-8GRK 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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Kingston 99U5474-013.A00LF 2GB
Kingston 9905630-025.A00G 8GB
Kingston 99U5403-036.A00G 4GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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Micron Technology 8ATF51264AZ-2G1AY 4GB
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Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
报告一个错误
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Bug description
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