Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gold Key Technology Co Ltd NMUD480E86-3200 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 11% 更低的延时

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E86-3200 8GB

报告一个错误

更快的读取速度，GB/s

19.5 16

测试中的平均数值
更快的写入速度，GB/s

15.0 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Gold Key Technology Co Ltd NMUD480E86-3200 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 27
读取速度，GB/s

16.0 19.5
写入速度，GB/s

12.5 15.0
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 3631

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR26D4U9D8ME-16 16GB

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Samsung M378B5173BH0-CH9 4GB

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Crucial Technology BL8G32C16U4W.8FE 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Kingston KCRXJ6-MIE 16GB

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Crucial Technology CT8G4SFS8266.C8FN 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

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Mushkin 991586 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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