Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston LV32D4U2S8ME-16X 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston LV32D4U2S8ME-16X 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston LV32D4U2S8ME-16X 16GB

Kingston LV32D4U2S8ME-16X 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 34

左右 29% 更低的延时
更快的写入速度，GB/s

12.5 11.4

测试中的平均数值

Kingston LV32D4U2S8ME-16X 16GB

需要考虑的原因
Kingston LV32D4U2S8ME-16X 16GB

报告一个错误

更快的读取速度，GB/s

18 16

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston LV32D4U2S8ME-16X 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 34
读取速度，GB/s

16.0 18.0
写入速度，GB/s

12.5 11.4
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2925 3243

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Samsung M386A2G40DB0-CPB 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

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Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB