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Kingston 2GB-DDR2 800Mhz 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
比较
Kingston 2GB-DDR2 800Mhz 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
总分
Kingston 2GB-DDR2 800Mhz 2GB
总分
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB
报告一个错误
更快的读取速度,GB/s
5
18.1
测试中的平均数值
更快的写入速度,GB/s
2,160.7
14.8
测试中的平均数值
需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
43
左右 -54% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Kingston 2GB-DDR2 800Mhz 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
43
28
读取速度,GB/s
5,987.5
18.1
写入速度,GB/s
2,160.7
14.8
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
957
3564
Kingston 2GB-DDR2 800Mhz 2GB RAM的比较
Samsung M378T5663DZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM的比较
G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMT16GX4M2Z3200C16 8GB
SK Hynix DDR2 800 2G 2GB
Corsair CMD16GX4M2B3200C16 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9905622-058.A00G 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C16-16GVKA 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CM4X8GF2666Z16K4 8GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-4800C18-8GTRG 8GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMD64GX4M8X4000C19 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston 9905663-006.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M2K4000C19 8GB
A-DATA Technology VDQVE1B16 2GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Samsung M393B1K70CH0-CH9 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Samsung M393B1K70CH0-YH9 8GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
报告一个错误
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Bug description
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