Kingston 9905403-061.A00LF 2GB vs G Skill Intl F4-3200C16-8GTZB 8GB

总分

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

差异规格评论

差异

Kingston 9905403-061.A00LF 2GB

需要考虑的原因
Kingston 9905403-061.A00LF 2GB

报告一个错误

G Skill Intl F4-3200C16-8GTZB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZB 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 57

左右 -90% 更低的延时
更快的读取速度，GB/s

18 6.8

测试中的平均数值
更快的写入速度，GB/s

14.1 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-3200C16-8GTZB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

57 30
读取速度，GB/s

6.8 18.0
写入速度，GB/s

5.5 14.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1244 3373

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Panram International Corporation PUD42400C154GNJW 4GB

Panram International Corporation PUD42400C154GNJW 4GB

Kingston 9905700-097.A00G 8GB

Kingston 9905700-097.A00G 8GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Corsair CM4X4GF2133C13K4 4GB

Corsair CM4X4GF2133C13K4 4GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

Kingston 99U5471-054.A00LF 8GB

Kingston 99U5471-054.A00LF 8GB

Kingston 99U5458-001.A00LF 2GB

Kingston 99U5458-001.A00LF 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Kingston 9932301-P01.A00G 4GB

Kingston 9932301-P01.A00G 4GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Transcend Information JM3200HLG-8G 8GB

Transcend Information JM3200HLG-8G 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-4000C17-8GTZR 8GB

G Skill Intl F4-4000C17-8GTZR 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Corsair CM4B8G7L2666A16K2-O 8GB

Corsair CM4B8G7L2666A16K2-O 8GB