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Kingston 9905403-090.A01LF 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
比较
Kingston 9905403-090.A01LF 4GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
总分
Kingston 9905403-090.A01LF 4GB
总分
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-090.A01LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
37
左右 27% 更低的延时
需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
报告一个错误
更快的读取速度,GB/s
16
13.9
测试中的平均数值
更快的写入速度,GB/s
12.6
8.9
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-090.A01LF 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
37
读取速度,GB/s
13.9
16.0
写入速度,GB/s
8.9
12.6
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2418
2808
Kingston 9905403-090.A01LF 4GB RAM的比较
Samsung M386B4G70DM0-YK03 32GB
Kingston K531R8-ETF 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT16G4SFD8266.M16FRS 16GB
Samsung M4 70T5663QZ3-CF7 2GB
SK Hynix HMA81GS6MFR8N-UH 8GB
AMD AE34G1601U1 4GB
Kingston 9905598-026.A00G 16GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CM4X8GD3000C16K4D 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston KYXC0V-MID 16GB
Samsung M393B1K70CH0-CH9 8GB
Transcend Information JM3200HLB-8G 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4SFD8213.C16FHP 8GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-4000C18-8GTRG 8GB
报告一个错误
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