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Kingston ACR16D3LS1KNG/4G 4GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
比较
Kingston ACR16D3LS1KNG/4G 4GB vs Micron Technology 4ATF1G64AZ-3G2E1 8GB
总分
Kingston ACR16D3LS1KNG/4G 4GB
总分
Micron Technology 4ATF1G64AZ-3G2E1 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
33
左右 9% 更低的延时
需要考虑的原因
Micron Technology 4ATF1G64AZ-3G2E1 8GB
报告一个错误
更快的读取速度,GB/s
16.7
12.5
测试中的平均数值
更快的写入速度,GB/s
10.9
7.8
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Kingston ACR16D3LS1KNG/4G 4GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
30
33
读取速度,GB/s
12.5
16.7
写入速度,GB/s
7.8
10.9
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1917
2876
Kingston ACR16D3LS1KNG/4G 4GB RAM的比较
Samsung M471A5143EB1-CRC 4GB
Kingston MSI16D3LS1KBG/4G 4GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB RAM的比较
Kingston 9965525-155.A00LF 8GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT8G4SFS824A.C8FP 8GB
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Micron Technology M471A1K43BB1-CRC 8GB
报告一个错误
×
Bug description
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